AOWF11N60 - MOSFET, N-CH, 600V, 11A, 27.8W, 0.65Ohm, TO262F
Type Designator: AOWF11N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 27.8 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 146 pF
Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm
Package: TO-262F