SPB80N06S2L-07 - MOSFET, N-CH, 55V, 80A, 210W, 0.007Ohm, TO263
Type Designator: SPB80N06S2L-07
Marking Code: 2N06L07
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 210 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 740 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO263