IPD60R600PFD7S - MOSFET, N-CH, 600V, 6A, 31W, 0.6Ohm, TO252
Type Designator: IPD60R600PFD7S
Marking Code: 60S600D7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.5 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 8 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO252