STD10P6F6 - MOSFET, P-CH, 60V, 10A, 35W, 0.16Ohm, DPAK
Type Designator: STD10P6F6
Marking Code: 10P6F6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 6.4 nC
Rise Time (tr): 5.3 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: DPAK