IPN80R600P7ATMA1 - MOSFET, N-CH, 800V, 8A, 7.4W, 0.51Ohm, SOT223
Informação do produto
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 8A
Drain Source Voltage Vds: 800V
Drain Source On State Resistance: 0.51ohm
On Resistance Rds(on): 0.51ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 7.4W
Transistor Case Style: SOT-223
Power Dissipation: 7.4W
No. of Pins: 3Pins
Operating Temperature Max: 150°C