NCE65T540F - MOSFET, N-CH, 650V, 8A, 31.6W, 0.54Ohm, TO220F
Type Designator: NCE65T540F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31.6 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 14.6 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 37 pF
Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm
Package: TO220F