TK100E08N1 - MOSFET, N-CH, 80V, 100A, 255W, TO220
Type Designator: TK100E08N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 255 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 2100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm
Package: TO-220
Ficha informativa
- Tipo
- MOSFET
- RDS
- 0.0032Ohm
- Canal
- N-CH
- Tensão
- 80V
- Corrente
- 100A
- Potência
- 255W
- Caixa
- TO220
- Montagem
- THT