IPB60R360P7ATMA1 - MOSFET, N-CH, 600V, 9A, 41W, 0.305Ohm, TO263
Informação do produto
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 9A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 0.305ohm
On Resistance Rds(on): 0.305ohm
Transistor Case Style: TO-263 (D2PAK)
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 3.5V
Power Dissipation Pd: 41W
Power Dissipation: 41W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: CoolMOS P7