TK10P60W - MOSFET N 600V 9.7A 80W 0.43R DPAK
Type Designator: TK10P60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
Maximum Drain Current |Id|: 9.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm
Package: DPAK