ASZ16 - Transistor GE, 60V, 8A, 30W
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 32
Maximum emitter-base voltage |Ueb|, V: 20
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 90
Transition frequency (ft), MHz: 0.125
Collector capacitance (Cc), pF: 190
Forward current transfer ratio (hFE), min: 45
Package of ASZ16 transistor: TO3