BC556 - Transistors Bipolar - BJT 100mA 80V PNP

FQP13N10L - Mosfet N, 100V, 12.8A, 65W, 0.18 Ohm, TO220

BC639 - TRANSISTOR, NPN, 80V, 1A, TO-92-3

BC556 - Transistors Bipolar - BJT 100mA 80V PNP Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 80 V Collector- Emitter Voltage VCEO Max:- 65 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: - 0.3 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 280 MHz DC Collector/Base Gain hFE Min: 180 at 2 mA at 5 V Maximum Operating Temperature:+ 150 C Mounting Style: Through Hole Package/Case: TO-92-3 (TO-226) Continuous Collector Current: - 0.1 A Maximum Power Dissipation: 625 mW Minimum Operating Temperature:- 55 C

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Disponível a partir de: 2013-12-21

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BC556

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BC556 - Transistors Bipolar - BJT 100mA 80V PNP

Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 80 V
Collector- Emitter Voltage VCEO Max:- 65 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: - 0.3 V
Maximum DC Collector Current: 0.1 A
Gain Bandwidth Product fT: 280 MHz
DC Collector/Base Gain hFE Min: 180 at 2 mA at 5 V
Maximum Operating Temperature:+ 150 C
Mounting Style: Through Hole
Package/Case: TO-92-3 (TO-226)
Continuous Collector Current: - 0.1 A
Maximum Power Dissipation: 625 mW
Minimum Operating Temperature:- 55 C

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