IRFB41N15D - MOSFET N 150V 41A 200W 0.045R TO220AB
Type Designator: IRFB41N15DPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 41 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 72 nC
Rise Time (tr): 63 nS
Drain-Source Capacitance (Cd): 510 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: TO-220AB