SISS65DN-T1-GE3 - MOSFET Transistor, P Channel, -94 A, -30 V, 0.0038 ohm, -10 V, -2.3 V
Informação do produto
Transistor Polarity:
P Channel
Continuous Drain Current Id:
-94A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.0038ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-2.3V
Power Dissipation Pd:
65.8W
Transistor Case Style:
PowerPAK 1212
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
TrenchFET Gen III Series