IRL640SPBF - Mosfet N, 200V, 17A, 125W, 0.18 Ohm, TO-263

IRL640SPBF - Mosfet N, 200V, 17A, 125W, 0.18 Ohm, TO-263

Descrição geral do produto

The IRL640SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is surface-mount and capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. This package is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

Dynamic dV/dt rating
Repetitive avalanche rated
Logic-level gate drive
RDS (ON) Specified at VGS = 4 and 5V
Surface-mount
Halogen-free

Aplicações

Industrial, Power Management

Informação do produto

Transistor Polarity: N Channel
Continuous Drain Current Id: 17A
Drain Source Voltage Vds: 200V
On Resistance Rds(on): 0.18ohm
Rds(on) Test Voltage Vgs: 5V
Threshold Voltage Vgs: 2V
Power Dissipation Pd: 125W
Transistor Case Style: TO-263
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: -
Automotive Qualification Standard: -
MSL: MSL 1 - Unlimited