IKW30N60H3FKSA1 - IGBT, 600V, 30A, 187W, TO247

IKW30N60H3 - IGBT, 600V, 30A, 187W, TO247

Descrição geral do produto

The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
Short circuit capability
Excellent performance
Low switching and conduction losses

Aplicações

Power Management, Alternative Energy

Informação do produto

DC Collector Current: 30A
Collector Emitter Saturation Voltage Vce(on): 2.4V
Power Dissipation Pd: 187W
Collector Emitter Voltage V(br)ceo: 600V
Transistor Case Style: TO-247
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Product Range: -
Automotive Qualification Standard: -
MSL: -