BSS123 - Mosfet N, 100V, 170mA, 360mW, 1.2R, SOT23

BSS123 - Mosfet N, 100V, 170mA, 360mW, 1.2R, SOT23

Descrição geral do produto

The BSS123 from Fairchild is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

Drain to source voltage (Vds) of 100V
Gate to source voltage of ±20V
Low on state resistance of 1.2ohm at Vgs 10V
Continuous drain current of 170mA
Maximum power dissipation of 360mW
Operating junction temperature range from -55°C to 150°C

Aplicações

Power Management, Industrial, Portable Devices, Consumer Electronics

Informação do produto

Transistor Polarity: N Channel
Continuous Drain Current Id: 170mA
Drain Source Voltage Vds: 100V
On Resistance Rds(on): 1.2ohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs: 1.7V
Power Dissipation Pd: 360mW
Transistor Case Style: SOT-23
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: -
Automotive Qualification Standard: -
MSL: MSL 1 - Unlimited