IKP15N60T - Igbt, 15A, 600V, 130W, TO220

IKP15N60T - Igbt, 30A, 600V, 130W, TO220 = K15T60


Descrição geral do produto.
The IKP15N60T is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
Very soft, fast recovery anti-parallel emitter controlled HE diode
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency - Low conduction and switching losses
High device reliability

5µs Short-circuit withstand time
Green product
Halogen-free

Aplicações

Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial
Informação do produto

DC Collector Current:
30A
Collector Emitter Saturation Voltage Vce(on):
2.05V
Power Dissipation Pd:
130W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-