FQN1N60CTA - Mosfet N, 600V,300mA, 1W, 9.3R, TO-92-3

FQN1N60CTA - Mosfet N, 600V,300mA, 1W, 9.3R, TO-92-3

Manufacturer:ON Semiconductor
Product Category:MOSFET
RoHS: Details
Technology:Si
Mounting Style:Through Hole
Package/Case:TO-92-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Id - Continuous Drain Current:300 mA
Rds On - Drain-Source Resistance:9.3 Ohms
Vgs - Gate-Source Voltage:30 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Configuration:Singl
Pd - Power Dissipation:1 W
Channel Mode:Enhancement
Packaging:Ammo Pack
Height:5.33 mm
Length:5.2 mm
Series:FQN1N60C
Transistor Type:1 N-Channel
Type:MOSFET
Width:4.19 mm
Brand:ON Semiconductor / Fairchild
Forward Transconductance - Min:0.75 S
Fall Time:27 ns
Product Type:MOSFET
Rise Time:21 ns
Subcategory:MOSFETs
Typical Turn-Off Delay Time:13 ns
Typical Turn-On Delay Time:7 ns
Unit Weight:240 mg