AOTF9N90 - MOSFET, N, 900V, 9A, 50W, 1.3R, TO220F
Type Designator: AOTF9N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 152 pF
Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
Package: TO-220F