HGTG20N60A4 - Transistor Igbt N,600V, 70A, 290W, TO247

HGTG20N60A4 - Transistor Igbt N,600V, 70A, 290W, TO247

IGBT, N, TO-247
Transistor Type: IGBT
DC Collector Current: 70A
Collector Emitter Voltage Vces: 2.7V
Power Dissipation Pd: 290W
Collector Emitter Voltage V(br)ceo: 600V
Operating Temperature Min: -55°C
Operating Temperature Max: 150°C
Transistor Case Style: TO-247
No. of Pins: 3
MSL: (Not Applicable)
SVHC: No SVHC (20-Jun-2013)
Alternate Case Style: SOT-249
Current Ic Continuous a Max: 70A
Current Temperature: 25°C
Device Marking: HGTG20N60A4
Fall Time tf: 32ns
Full Power Rating Temperature: 25°C
No. of Transistors: 1
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-247
Pin Format: GCE
Power Dissipation Max: 290W
Power Dissipation Pd: 290W
Power Dissipation Pd: 290W
Power Dissipation Ptot Max: 290W
Pulsed Current Icm: 280A
Rise Time: 12ns
Termination Type: Through Hole
Transistor Polarity: N Channel
Voltage Vces: 600V