IRLR2905PBF - MOSFET, N-CH, 55V, 42A, 110W, 0.027Ohm, TO252

IRLR2905PBF - MOSFET, N-CH, 55V, 42A, 110W, 0.027Ohm, TO252

Descrição geral do produto

The IRLR2905PBF is a N-channel HEXFET® Power MOSFET. The international rectifier utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2905)
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching and Fully Avalanche Rated

Aplicações

Audio, Industrial, Power Management

Informação do produto

Transistor Polarity: N Channel
Drain Source Voltage Vds: 55V
Continuous Drain Current Id: 42A
On Resistance Rds(on): 0.027ohm
Transistor Case Style: TO-252 (DPAK)
Transistor Mounting: Surface Mount
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs: 2V
Power Dissipation Pd: 110W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Product Range: -
Automotive Qualification Standard: -
MSL: MSL 1 - Unlimited