IXFN48N50Q - MOSFET N 500V 48A 0.1R SOT227
Type Designator: IXFN48N50Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 481 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 48 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 190 nC
Rise Time (tr): 250 nS
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: SOT227B