IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252 - IPD80R280P7

IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252 - IPD80R280P7

IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252 #1 - IPD80R280P7

IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252 - IPD80R280P7

IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252 - IPD80R280P7

IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252 #1 - IPD80R280P7

IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252

IPW80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO247

IXFR44N50Q - MOSFET, N-CH, 500V, 34A, 313W, 0.12Ohm, ISOPLUS

IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252 Type Designator: IPD80R280P7 Marking Code: 80R280P7 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 101 W Maximum Drain-Source Voltage |Vds|: 800 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V Maximum Drain Current |Id|: 17 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 36 nC Rise Time (tr): 6 nS Drain-Source Capacitance (Cd): 20 pF Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm Package: TO252

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IPD80R280P7

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IPD80R280P7 - MOSFET, N-CH, 800V, 17A, 101W, 0.28Ohm, TO252

Type Designator: IPD80R280P7
Marking Code: 80R280P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 101 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 36 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: TO252

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