P9006EDG - MOSFET, P-CH, 60V, 15A, 41W, 0.09Ohm, TO252
Type Designator: P9006EDG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 41 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23.1 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 122 pF
Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm
Package: TO252