S2000A - Transistor Npn 125W 1500V 8A

S2000A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 125
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 1500
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 125
Forward current transfer ratio (hFE), min: 2.2

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION ?¤ With TO-3P(H)IS package ?¤ High voltage ?¤ Fast switching APPLICATIONS ?¤ Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ?¤ Absolute maximum ratings (Ta=25?? ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 1500 700 10 8 15 UNIT V V V A A W ?? ?? Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25?? 50 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT ?? /W