TK12A65D - MOSFET, N-CH, 650V, 12A, 50W, 0.54Ohm, TO220F

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TK12A65D - MOSFET, N-CH, 650V, 12A, 50W, 0.54Ohm, TO220F Type Designator: TK12A65D Marking Code: K12A65D Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 50 W Maximum Drain-Source Voltage |Vds|: 650 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 12 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 40 nC Rise Time (tr): 35 nS Drain-Source Capacitance (Cd): 200 pF Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm Package: TO220SIS

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TK12A65D

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TK12A65D - MOSFET, N-CH, 650V, 12A, 50W, 0.54Ohm, TO220F

Type Designator: TK12A65D
Marking Code: K12A65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm
Package: TO220SIS

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