SIHU5N50D-GE3 - Mosfet N, 500V, 5.3A, 104W, 1.2R, TO251

SIHU5N50D-GE3 - Mosfet N, 500V, 5.3A, 104W, 1.2R, TO251

Descrição geral do produto

The SIHU5N50D-GE3 is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications.

Low area specific ON-resistance
Low input capacitance (CISS)
Reduced capacitive switching losses
High body diode ruggedness
Avalanche energy rated (UIS)
Simple gate drive circuitry
Low figure-of-merit (FOM) Ron x Qg
Fast switching
Halogen-free

Aplicações

Industrial, Power Management, Portable Devices, Consumer Electronics

Informação do produto

Transistor Polarity: N Channel
Continuous Drain Current Id: 5.3A
Drain Source Voltage Vds: 500V
On Resistance Rds(on): 1.2ohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs: 3V
Power Dissipation Pd: 104W
Transistor Case Style: TO-251
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: D Series
Automotive Qualification Standard: -
MSL: MSL 1 - Unlimited