SI4463BDY-T1-E3 - Mosfet, P, 20V, 9.8A, 0.0085R, 1.5W

SI4463BDY-T1-E3 - Mosfet, P, 20V, 9.8A, 0.0085R, 1.5W Descrição geral do produto The SI4463BDY-T1-E3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode. -55 to 150°C Operating temperature range Aplicações Industrial, Power Management Informação do produto Transistor Polarity: P Channel Continuous Drain Current Id: 9.8A Drain Source Voltage Vds: -20V On Resistance Rds(on): 0.0085ohm Rds(on) Test Voltage Vgs: 12V Threshold Voltage Vgs: -1.4V Power Dissipation Pd: 1.5W Transistor Case Style: SOIC No. of Pins: 8Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: MSL 1 - Unlimited