SI4463CDY-T1-GE3 - Mosfet, P, 20V, 18.6A, 0.006R, 5W

SI4463CDY-T1-GE3 - Mosfet, P, 20V, 18.6A, 0.006R, 5W

Descrição geral do produto

The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications.

100% Rg tested
100% UIS tested
Halogen-free
-55 to 150°C Operating temperature range

Aplicações

Industrial, Power Management

Informação do produto

Transistor Polarity: P Channel
Continuous Drain Current Id: -18.6A
Drain Source Voltage Vds: -20V
On Resistance Rds(on): 0.006ohm
Rds(on) Test Voltage Vgs: -10V
Threshold Voltage Vgs: -600mV
Power Dissipation Pd: 5W
Transistor Case Style: SOIC
No. of Pins: 8Pins
Operating Temperature Max: 150°C
Product Range: -
Automotive Qualification Standard: -
MSL: MSL 1 - Unlimited