2SK1120 - Mosfet N, 1000V, 8A, 150W, 1.8 Ohm, TO3PN
Category - Power MOSFET
Channel Mode -Enhancement
Channel Type - N
Configuration - Single
Dimensions - 15.9 x 4.8 x 19mm
Height - 19mm
Length - 15.9mm
Maximum Continuous Drain Current - 8 A
Maximum Drain Source Resistance - 1.8 R
Maximum Drain Source Voltage -1000 V
Maximum Gate Source Voltage - ±20 V
Maximum Operating Temperature - +150 °C
Maximum Power Dissipation - 150 W
Minimum Operating Temperature - -55 °C
Mounting Type - Through Hole
Number of Elements per Chip - 1
Package Type - TO-3P W, TO-3PN
Pin Count - 3
Typical Gate Charge @ Vgs - 120 nC V @ 10
Typical Input Capacitance @ Vds - 1300 pF V @ 25
Width - 4.8mm