MJ11015G - TRANSISTOR P, 120V, 30A, 200W, TO-3

MJ11015G - TRANSISTOR P, 120V, 30A, 200W, TO-3

Descrição geral do produto
The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.

Collector to emitter voltage (Vce) of -120V
Collector current (Ic) of -30A
Power dissipation of 200W
Operating junction temperature range from -55°C to 200°C
Collector emitter breakdown Voltage of -120V
Collector emitter saturation voltage of -3V at 20A collector current

Aplicações

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Transistor Polarity: PNP
Collector Emitter Voltage V(br)ceo: -120V
Transition Frequency ft: -
Power Dissipation Pd: 200W
DC Collector Current: -30A
DC Current Gain hFE: 1000hFE
Transistor Case Style: TO-3
No. of Pins: 2Pins
Operating Temperature Max: 200°C
Product Range: -
Automotive Qualification Standard: -
RoHS Phthalates Compliant: Yes
MSL: -