2SK1119 - MOSFET, N-CH, 1000V, 4A, 100W, 3.8Ohm, TO220
Type Designator: 2SK1119
Marking Code: K1119
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 3.8 Ohm
Package: TO220AB
Ficha informativa
- Tipo
- MOSFET
- RDS
- 3.8Ohm
- Canal
- N-CH
- Tensão
- 1000V
- Corrente
- 4A
- Potência
- 100W
- Caixa
- TO220
- Montagem
- THT