P2610ATG - MOSFET, N-CH, 100V, 50A, 128W, 0.026Ohm, TO220
Type Designator: P2610ATG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 128 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 79 nC
Rise Time (tr): 250 nS
Drain-Source Capacitance (Cd): 887 pF
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO220