Type Designator: TPCA8109
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 24 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 56 nC
Rise Time (tr): 9.2 nS
Drain-Source Capacitance (Cd): 460 pF
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: SOP ADVANCE