Type Designator: MDS5652URH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 24.6 nS
Drain-Source Capacitance (Cd): 154 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: SOIC-8
Ficha informativa
- Tipo
- MOSFET
- RDS
- 0.022Ohm
- Canal
- N-CH
- Tensão
- 30V
- Corrente
- 7.5A
- Potência
- 2W
- Caixa
- SOIC8
- Montagem
- SMD