IKW75N65EH5 - IGBT, N-CH, 650V, 90A, 395W, TO247
Type Designator: IKW75N65EH5
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EEH5
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 395
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25?, A: 90
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
Maximum Junction Temperature (Tj), ?: 175
Rise Time (tr), typ, nS: 33
Collector Capacity (Cc), typ, pF: 130
Total Gate Charge (Qg), typ, nC: 160
Package: TO247