MBQ50T65FDSC - IGBT, N-CH, 650V, 100A, 273W, TO247
Type Designator: MBQ50T65FDSC
Marking Code: 50T65FDSC
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 273
Maximum Collector-Emitter Voltage |Vce|, V: 650
Collector-Emitter saturation Voltage |Vcesat|, V: 1.95
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 100
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 60
Maximum Collector Capacity (Cc), pF: 238
Package: TO247