IRFBG30 - Mosfet N, 1000V, 3.1A, 125W, 50 Ohm, TO220

Mosfet N, 1000V, 3.1A, 125W, 50 Ohm, TO220

Transistor Polarity: N Channel
Continuous Drain Current Id: 3.1A
Drain Source Voltage Vds: 1kV
On Resistance Rds(on): 5ohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs: 4V
Power Dissipation Pd: 125W
Transistor Case Style: TO-220AB
No. of Pins: 3
Operating Temperature Max: 150°C
MSL: -
Current Id Max: 3.1A
Current Temperature: 25°C
Full Power Rating Temperature: 25°C
Junction to Case Thermal Resistance A: 1°C/W
Lead Spacing: 2.54mm
No. of Transistors: 1
Operating Temperature Min: -55°C
Operating Temperature Range: -55°C to +150°C
Pulse Current Idm: 12A
Termination Type: Through Hole
Voltage Vds Typ: 1kV
Voltage Vgs Max: 20V
Voltage Vgs Rds on Measurement: 10V