BU2508AF - Transistor Npn 1500/700V 45W 8A

BU2508AF

Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 45
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 700
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF: 90
Forward current transfer ratio (hFE), min: 4


INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 4 A IBM Base Current-Peak 6 A Collector Power Dissipation PC @ TC=25? 45 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508AF ELECTRICAL CHARACTERISTICS TC=25? unless otherw