STD12N65M2 - MOSFET, N-CH, 650V, 8A, 85W, 0.5Ohm, DPAK
Type Designator: STD12N65M2
Marking Code: 12N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 85 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16.5 nC
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 25 pF
Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
Package: DPAK