SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11
• • • • High Current Capability. Hermetic TO3 Metal package. Designed For Switching and Linear Applications Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO VCEX VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range
250V 250V 200V 7V 20A 25A 4A 110W 0.63W/°C -65 to +200°C -65 to +200°C