VN0300L-G - Mosfet N, 30V, 640mA, 1W, 1.2R TO92

DMN1019UFDE-7 - Mosfet N, 8V, 11A, 0.010R, U-DFN2020-E-6

STTH8R06FP - Diodo Ultra-Rapido 8A 600V 25nS To220F

VN0300L-G - Mosfet N, 30V, 640mA, 1W, 1.2R TO92 Technology: Si Mounting Style: Through Hole Package/Case: TO-92-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 640 mA Rds On - Drain-Source Resistance: 1.2 Ohms Vgs - Gate-Source Voltage: 30 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Configuration: Single Channel Mode: Enhancement Brand: Microchip Technology Height: 5.33 mm Length: 5.21 mm Pd - Power Dissipation: 1 W Transistor Type: 1 N-Channel Type: FET Width: 4.19 mm Unit Weight: 453,600 mg

4,61 €

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Disponível a partir de: 2017-09-19

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VN0300L-G

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VN0300L-G - Mosfet N, 30V, 640mA, 1W, 1.2R TO92

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-92-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 640 mA
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Channel Mode: Enhancement
Brand: Microchip Technology
Height: 5.33 mm
Length: 5.21 mm
Pd - Power Dissipation: 1 W
Transistor Type: 1 N-Channel
Type: FET
Width: 4.19 mm
Unit Weight: 453,600 mg

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