PHW20N50E - Transistor, N, 20A, 250W, 500V, SOT429
Type Designator: PHW20N50E
Type of PHW20N50E transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 250
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 20
Maximum junction temperature (Tj), °C: 150
Rise Time of PHW20N50E transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.27
Package: SOT429