IRFS830 - MOS-N-FET V-MOS 500V,3A, 35W, TO220

Type Designator: IRFS830

Type of IRFS830 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFS830 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220