2SJ412 - MOSFET, P-CH, 100V, 16A, 60W, 0.21 Ohm, TO263
Type Designator: 2SJ412
Marking Code: J412
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 48 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 440 pF
Maximum Drain-Source On-State Resistance (Rds): 0.21 Ohm
Package: TO220FL TO220SM