FQP8N80C - MOSFET, N-CH, 800V, 8A, 178W, 1.55Ohm, TO220
Type Designator: FQP8N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 178 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 35 nC
Maximum Drain-Source On-State Resistance (Rds): 1.55 Ohm
Package: TO220