TK39N60W - MOSFET, N-CH, 600V, 38.8A, 270W, 0.065Ohm, TO247
Type Designator: TK39N60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 270 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
Maximum Drain Current |Id|: 38.8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 110 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: TO-247