Type Designator: 2SB1212
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.9
Maximum collector-base voltage |Ucb|, V: 160
Maximum collector-emitter voltage |Uce|, V: 140
Maximum emitter-base voltage |Ueb|, V: 12
Maximum collector current |Ic max|, A: 1.5
Maksimalna temperatura (Tj), °C: 165
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 200
Noise Figure, dB: -
Package of 2SB1212 transistor: TO92
Ficha informativa
- Tipo
- Si
- Canal
- PNP
- Tensão
- 160V
- Corrente
- 1.5A
- Potência
- 0.9W
- Caixa
- TO92
- Montagem
- THT