BD681 - Transistor NPN, 100V, 40W, TO126
Type Designator: BD681
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 40
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 4
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 1
Forward current transfer ratio (hFE), min: 750
Package of BD681 transistor: TO126