SGH80N60UFD - IGBT, 600V, 80A, TO-3P

Informação do Produto: IGBT, 600V, 80A, TO-3P DC Collector Current: 80A Collector Emitter Saturation Voltage Vce(on): 2.6V Power Dissipation Pd: 195W Collector Emitter Voltage V(br)ceo: 600V Transistor Case Style: TO-3P No. of Pins: 3 Operating Temperature Max: 150°C Current Ic Continuous a Max: 80A Current Temperature: 25°C Device Marking: SGH80N60UFDTU Fall Time tf: 50ns Full Power Rating Temperature: 25°C No. of Transistors: 1 Operating Temperature Min: -55°C Operating Temperature Range: -55°C to +150°C Pin Format: GCE Pulsed Current Icm: 220A Rise Time: 50ns Termination Type: Through Hole Transistor Polarity: N Channel Transistor Type: IGBT Voltage Vces: 600V